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November 2013
FDB14N30
N-Channel UniFET TM MOSFET
300 V, 14 A, 290 m ?
Features
? R DS(on) = 290 m ? (Max.) @ V GS = 10 V, I D = 7 A
? Low Gate Charge (Typ. 18 nC)
? Low C rss (Typ.17 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDB14N30TM
300
Unit
V
I D
Drain Current
- Continuous (T C = 25 ? C)
- Continuous (T C = 100 ? C)
14
8.4
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
56
? 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
330
14
14
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ? C)
- Derate above 25 ? C
140
1.12
W
W/ ? C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
? C
? C
Thermal Characteristics
Symbol
R ? JC
Parameter
Thermal Resistance, Junction to Case, Max
FDB14N30TM
0.87
Unit
R ? JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in 2 pad of 2 oz copper), Max.
62.5
40
o
C/W
?2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. C1
1
www.fairchildsemi.com
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